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Open RQC colloquium. Lecture 57
Excitons in atom-thin semiconductors
Lecturer
Mikhail Glazov
The leading scientific researcher at the Ioffe Institute (St.-Petersburg, Russia); professor at the Academic University.
When:
октябрь 04-24, 201907:00
Where:
Skolkovo IC, Bolshoy Bulvar 30, bld. 1, Skolkovo Institute of Science and Technology;
conference hall No. 25, building G7, 3rd floor
Free entrance
You can get to the building of the Skolkovo Institute of Science and Technology by the RQC corporate bus, which goes from the "Slavyanskiy bul'var" metro station to the Institute building.
Bus moves from the "Slavyanskiy bul'var" metro station near the Rublevskoye shosse (see link above) at 9:30 am.
Abstract
Atomically thin materials such as graphene and monolayer transition metal dichalcogenides demonstrate fascinating physical properties due to their reduced dimensionality and crystal symmetry. The family of semiconducting transition metal dichalcogenides is an especially promising platform for fundamental studies of two-dimensional systems. A crystal lattice with broken inversion symmetry combined with strong spin-orbit interactions leads to a unique combination of the spin and valley degrees of freedom. In addition, the two-dimensional character of the monolayers and weak dielectric screening yield a significant enhancement of the Coulomb interaction. The resulting formation of bound electron-hole pairs, or excitons, dominates the optical and spin properties of the material.
In my talk I will review recent progress in understanding of the excitonic properties in monolayer transition metal dichalcogenides. I will discuss energy spectrum and fine structure of neutral and charged excitons and their manifestations in optical and transport properties of two-dimensional semiconductors. Novel effects on specific to the atom-thin multivalley semiconductors will be highlighted.# Biography
Prof. Mikhail Glazov is the leading scientific researcher at the Ioffe Institute (St.-Petersburg, Russia), also the professor at the Academic University; he got his PhD in 2008 and habilitation (Dr. Sci.) in 2012 both from Ioffe Institute. Since October 2016 Mikhail Glazov is the corresponding member of the Russian Academy of Sciences. The research interests of Mikhail Glazov include semiconductor theory, physics of graphene and two-dimensional materials, spin and light-matter coupling effects.